| 摘要 |
PURPOSE:To form an MOSFET with good yield without insulation breakdown of a thin gate oxide film during the manufacture of an element by forming a gate electrode and a gate oxide film by a reaction in the boundary between the electrode and a silicon substrate after forming the gate electrode. CONSTITUTION:A field oxide film 2 is formed, and a hole is opened by photoetching step to form an element region 3. Then, a molybdenum 4 which contains oxygen to become a gate electrode is accumulated directly on a silicon exposed region of the region 3. Then, a gate electrode is coated with a resist 5 in the photographing step, other portion is removed by reactive photoetching with gas mixed with oxygen, and a gate electrode 6 is formed. Then, with this resist 5 and the electrode 6, and the film 2 as masks B<+> ions are implanted to form source and drain regions 7, 8. Then, after the resist 5 is ashed in oxygen plasma and removed, oxygen is passed at the heat treating time for forming a gate oxide film, and a silicon dioxide film 9 is accumulated by sputtering as the film for suppressing the discharge of the oxygen from the surface of the gate electrode metal. |
