| 摘要 |
PURPOSE:To improve the working efficiency by opposing an ion beam collision surface formed of any of materials having the possibility of ashing and low etching speed to the opposed region of a substrate which is mounted at least on the rear surface of a holder, thereby shortening the prescribed time of etching a wafer without loss of the quality. CONSTITUTION:Wafers 13 are secured to both front and rear surfaces of a holder 14, one is opposed to an ion source 12. When first etching is performed, the wafer 13 secured to the opposed front surface is initially etched. Then, the holder 14 is turned at 180 deg., and when the second etching is achieved, Ar ion beam 16 is collided with a resist layer 19. Accordingly, a resist agent is flown to the wafer 13, the flown agent is ashed together with the resist for forming the prescribed etching pattern of the wafer 13. Therefore, if the pattern formed by ion etching to the wafer 13 has the same quality as that of the wafer formed by the conventional apparatus and the sizes of the holder 14 and the wafer 13 are the same, the wafer 13 can be shortened to approx. 1/2 of the conventional one per one wafer in the prescribed time for evacuating a vacuum chamber 11 in the prescribed vacuum degree. |
