| 摘要 |
PURPOSE:To accurately facilitate the cleavage in high yield by forming only a stripe for flowing a current except an electrode at the cleaved portion and not forming on the other portion. CONSTITUTION:A Cr-Au metal layer 2 is deposited on the surface of a crystal 1 for a semiconductor laser, or an Au-Ge-Ni alloy layer and an electrode layer 7 of Au are deposited on a GaAs substrate. It is patterned by a photolithographic technique, the metal 2 which arrives at the cleaved portion 3 is formed only on the stripe 4 of a semiconductor laser device, but not formed except the striped portion. Thus, coating of powder due to cutting of the metal 2 is suppressed to the minimum on the layer 5 for performing a laser oscillation. Further, since a metal is formed on the stripe 4 to the end 6, a current is also flowed to the vicinity of the end 6, and no loss occurs. |
