| 摘要 |
PURPOSE:To prevent a wiring layer from disconnecting at the electrode contacting window and a resistance from increasing by providing a metal wiring layer of 2-layer structure that aluminum layers are laminated on a high melting point metal or its silicide layer which is chemically grown in vapor phase. CONSTITUTION:A layer 15W which forms a metal wiring layer 15 is formed by chemical vapor phase growing method. Accordingly, the layer is formed substantially in uniform thickness on the inner surface even in a deep electrode contacting window 14 having 1.5mum in opening size and 1mum of depth. An aluminum layer 15Al of the electrode contacting window 14 of the case that the aluminum layer 15Al after finishing the formation of a W layer 15W is formed in a sectional shape to form a region 16 formed in an extremely reduced thickness to cause a disconnection. However, since the W layer 15W having a resistance value lower by 2,000-3,000Angstrom of thickness is disposed on the lower layer, a current flows through the layer 15W and does not generate a heat in the thin region 16 of the Al layer 15Al at the wiring layer 15 at the operating time of the IC and hence the energizing time, the disconnection of the Al layer 15Al is prevented, and even if the Al layer 15Al is disconnected, the layer 15W has sufficiently low resistance. Thus, the wiring resistance is not largely increased. |
