| 摘要 |
PURPOSE:To form a pattern having a relatively large thickness in a good yield without complicating the steps by employing a photosensitive resin mixed with a foaming agent. CONSTITUTION:A photoresist 33 is coated on the surface 32 of a semiconductor substrate 31 (a), a photoresist 34 mixed with foaming agent is coated thereon (b), a photoresist pattern 35 mixed with the agent and the conventional photoresist pattern 36 are formed at the prescribed position (c), and an aluminum film 37 is deposited at 1.0mum (d). When the substrate 31 is heat treated at 150-200 deg.C, the agent in the pattern 35 is reacted to generate gas to foam, and the photoresist 35 with the agent is swelled (e). The aluminum film 39 of the periphery of a photoresist pattern 38 with the agent swelled at that time is elongated to disconnect or very reduce the thickness of the aluminum film 39 of the periphery, and to form the state containing many pinholes, the patterns 39, 39 are removed readily by a resist separating solution, thereby forming the prescribed aluminum pattern 45 (f). |
