| 摘要 |
PURPOSE:To obtain a highly reliable, high-quality and highly efficient amorphous silicon solar cell, wherein an electrical short-circuit is not existing at all, by a method wherein, after back electrodes, an amorphous silicon film and light-transmitting electrodes were formed on an insulative substrate, a coated film having a resistance to corrosion to liquid, with which the lastly formed electrodes are corroded, is formed and a formed amorphous silicon solar cell element is dipped in the electrode corrosion liquid. CONSTITUTION:A formed amorphous silicon solar cell element is dipped in liquid having a corrosiveness to its light-transmitting electrodes, such as dilute hydrochloric acid, for about 3min. At this time, the whole surface of the amorphous silicon solar cell element has been protected with the SiO2 film 6 excluding the power lead-out terminals 30a and 34a, but when there exist structures, wherein electrical short-circuit are generating due to the pinholes of the amorphous silicon film 4 and defects of the substrate 1 and the back electrodes 31-34, structurally discontinuous parts generate on the peripheries of the structures, light-transmitting electrodes only in the parts are selectively corroded and the short-circuit parts due to the light-transmitting electrodes are removed. Accordingly, there is no loss at all to the output characteristics. As a result, a highly reliable, high-quality and highly efficient amorphous silicon solar cell can be obtained at high yeild rate. |
