发明名称 HEAT INTERCEPTING CIRCUIT AT SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To protect safely a semiconductor integrated circuit device by a method wherein a collector terminal connected to the constant-current source of a first N-P-N transistor is connected to the base terminal of a second N-P-N transistor connected between the node of a second and a third resistors for division of resistor and an earth terminal through the resistors and a diode. CONSTITUTION:When the temperature of an integrated circuit device rises, the base emitter voltage VBE drops. When the voltage thereof drops lower than a first referential voltage VA1, a first N-P-N transistor 6 is made to ON, a second N-P-N transistor 10, and a third N-P-N transistor 13 whose base terminal is connected to the collector terminal of the first N-P-N transistor 6 through a resistor 12, are made to OFF. When the third N-P-N transistor 13 thereof is made to OFF, action of a circuit connected through an output terminal 200' is intercepted. While, by making the second N-P-N transistor 10 to OFF, because the referential voltage rises to VA2 from VA1, the circuit is held to the intercepted condition as it is as long as the VBE comes not to rise up to the value VA2 even when the circuit is intercepted and the temperature is dropped.
申请公布号 JPS60183760(A) 申请公布日期 1985.09.19
申请号 JP19840040775 申请日期 1984.03.01
申请人 MITSUBISHI DENKI KK 发明人 KIKUYAMA SEIICHIROU
分类号 H01L23/58;H02H5/04 主分类号 H01L23/58
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