| 摘要 |
A semiconductor arrangement for producing defined potentials with a first region and a second region, which form a pn semiconductor junction, is described. Spaced apart from the first region, a plurality of further regions is arranged which also form a pn junction with the second region and are in each case separated from one another and from the first region by the second region. To remove high transverse edge field strengths, additional regions, which also form pn junctions with the second region, can be provided, if necessary, adjoining the first and the further regions. The semiconductor arrangement according to the invention can be used, for example, as analog/digital converter or as low-capacitance radiation detector.
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