| 摘要 |
PURPOSE:To prevent the efficiency of charge transfer from being reduced due to the positioning error of a mask, by making charge guide regions by a self-arranging method. CONSTITUTION:An SiO2 film is coated on a P-type semiconductor substrate wherein charge weies 1, 1a, 2, 2a are previously provided. SiO2 film parts on regions 102, B103, 104, B 105, 106, B107 of the substrate are etched away, thereby leaving the SiO2 film as islands on other regions G102', 101, G104', 103, G106', 105 of the substrate. Oxidation is performed again to increase the thickness of the SiO2 parts film on the latter regions. At the same time, thin SiO2 films are produced on the former exposed regions. All the regions are used as cells. Transfer poles E1, E2 are fitted thereon. |
