| 摘要 |
A semiconductor memory device is constituted by a MOS transistor having a floating gate for storing data. An erase gate, a portion of which is under a part of the floating gate, is arranged on the MOS transistor to discharge electrons from the floating gate. The MOS transistors are arranged in a matrix form in which the erase gates of all the MOS transistors are commonly connected and a data erase voltage is applied to the erase gates to erase the data. |
