| 摘要 |
An insulator layer 2 is provided over the surface of a P type semiconductor substrate. A P type semiconductor region is provided below the insulator layer and functions as one electrode of a capacitor of the device. A relatively heavily doped N-type region 5 is provided below the P-type region 4. A conductive layer 9 is provided over the insulating layer over the heavily doped P-type region 4, and functions as another electrode of the capacitor of the device and extends into a field region to provide a field shield layer.
<??>The capacitor may be a capacitor of a 1-transistor, 1-capacitor memory cell, in which case the heavily doped P-type region 5 and the conductive layer 9 do not extend to a gate region of a transfer gate transistor of the memory cell. |
