| 摘要 |
PURPOSE:To obtain a high withstand voltage semiconductor device being superior in mass productivity, economical efficiency, and moreover being high reliable by a method wherein a silicon nitride film is used as a surface passivation film, and moreover the device is sealed by epoxy resin. CONSTITUTION:An SiN film is used as a passivation film 2 for stabilization of the surface of a high withstand voltage semiconductor element 1, and moreover epoxy resin is used as a package 3. Accordingly, impurities to invade from the outside are intercepted completely according to the SiN film 2 even when epoxy resin being doubtful in regard to the point of humidity resistance as compared with a ceramic case is used, and the high withstand voltage semiconductor element 1 operates stably. |
