| 摘要 |
PURPOSE:To enable to detect even infrared rays having respectively a small optical energy by a method wherein electrodes, to which a first potential to make the semiconductor layer deplete up to at least the interface between the metal layer and the semiconductor layer is given, are provided on a negative conductive-type semiconductor layer formed by making a Schottky contact with the upper surface of the metal layer, in which optical charge generates, through an insulating layer. CONSTITUTION:When first voltage, that is, negative boltage Vg, by which depletion layers spread up to the interface between a metal layer 12 and a semiconductor layer 13 in the semiconductor layer 13, is impressed on electrodes 15a and 15b, such band conditions as diagrammed are seen in the metal layer 12, the semiconductor layer 13, an insulating layer 14 and the electrodes 15a. In such the condition, when infrared rays are irradiated from the upper direction of the electrodes 15a, the infrared rays transmit the electrodes 15a, the insulating layer 14 and the semiconductor layer 13, reach the metal layer 12 and are absorbed in the metal layer 12, and optical charge, that is, hot holes generate. Some hot holes having respectively an optical energy, which exceeds the height psims of the Schottky barrier between the semiconductor layer 13 and the metal layer 12, among the hot holes are injected in the semiconductor layer 13 and the hot holes are stored as charge just under the insulating film 14 formed on the surface of the semiconductor layer 13. |
