发明名称 |
INTEGRATED SEMICONDUCTOR CIRCUIT HAVING AN INTERCONNECTION LAYER CONSISTING OF AN ALUMINIUM/SILICON ALLOY |
摘要 |
Contact interconnect levels for integrated circuit with a semiconductor substrate consisting of silicon in which and on which components forming the circuit are produced, are composed essentially of an aluminum/silicon/titanium alloy having a proportion of about 1 through 2% by weight silicon and a titanium content of less than about 0.5% by weight. The reliability and loadability of electrical interconnects for VLSI systems is increased by utilization of this metallization. |
申请公布号 |
EP0110401(A3) |
申请公布日期 |
1985.09.18 |
申请号 |
EP19830112024 |
申请日期 |
1983.11.30 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
FISCHER, FRANZ, DR. ING. PHYS. |
分类号 |
C22C21/00;H01L21/28;H01L21/3205;H01L23/52;H01L23/532;H01L29/43;(IPC1-7):H01L23/52 |
主分类号 |
C22C21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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