发明名称 |
PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
A photoelectric conversion device comprises a plurality of series-connected semiconductor elements (U1, U2 ... Un) formed on an insulating substrate and each element comprises a first electrode (E1, E2 ... En) formed on the substrate, a non-single-crystal photoelectric semiconductor layer (Q1, Q2 ... Qn) and a second electrode (F1, F2 ... Fn) with the first electrode (Ei) of an element (Ui) in the series array connected to the second electrode (Fi+1) of the next element (Ui+1) in the array by means of a coupling portion (Ki). For enhancing the stability of the device the electrode layers (Ei, Fi) or at least one of them is made as a multi-layer structure with a layer of electrically-conductive metal oxide contacting the semiconductor layer (Qi) and one or more further conductive layers, the metal oxide being selected for stability with the particular photoelectric semiconductor material. |
申请公布号 |
EP0113959(A3) |
申请公布日期 |
1985.09.18 |
申请号 |
EP19830307192 |
申请日期 |
1983.11.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI C/O SEMICONDUCTOR ENERGY;ITOH, KENJI C/O SEMICONDUCTOR ENERGY;WATABE, SATSUKI C/O SEMICONDUCTOR ENERGY |
分类号 |
H01L31/04;H01L27/142;H01L27/144;H01L27/146;H01L31/0392 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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