Magnetic bubble memory device.

摘要

A magnetic bubble memory device comprises a bubble propagation path defined by a wide-gap pattern. The bubble propagation path is defined by a pattern of elements (11, 12) each having an asymmetrically curved shape with an entrance-side segment (11a, 12a) and an exit-side segment (11b, 12b), the elements being arranged at a predetermined step (P) so that the exit-side segment of one element is opposed to the entrace-side segment of another element with a gap therebetween, and the difference (h) in lenght between the entrance-side segment and the exit-side segment of one element being of 10% to 25% of the height (H) of the element. The geometry of the bubble propagation path is favourable for gaining an increase in density and providing a high propagation characteristic.