发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To attain stable operation by providing MOS transistors (TR) of one conduction type respectively connected to the 1st and 2nd MOS TRs of one conduction type whose sources are connected in common as loads. CONSTITUTION:N-channel MOS TRs 6, 7 are connected between outputs 1, 2 and a power supply V and each gate is connected to common. Supose that a level of the output 2 is decreased to a level of (power level - VTN) due to variation of TRs, the TR7 at the output side 2 of the TRs 6, 7 is conductive, the capability as a load is increased equivalently, the on-resistance is decreased and the reduction of a level VB at a connecting point B is prevented, then a level difference between the input 1 and the level VB of the connecting point B is lower than a threshold voltage VTNof the TR2, and the TR2 keeps the off- state. Thus, even if the capability of the TRs is in variation, the circuit is operated normally without incurring the decrease in the level difference between the outputs 1 and 2 and inversion.
申请公布号 JPS60182808(A) 申请公布日期 1985.09.18
申请号 JP19840039617 申请日期 1984.03.01
申请人 NIHON DENKI AISHII MAIKON SYSTEM KK 发明人 ASAI HIDEKATA;MARUYAMA SHIGERU
分类号 H03F3/345;H01L21/8238;H01L27/092;H01L27/10;H03F3/34;H03F3/45 主分类号 H03F3/345
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