| 摘要 |
PURPOSE:To contrive the improvement in signal detecting performance by a method wherein a crystal substrate with crystals of different composition formed in accordance with the patterns of element structure is used in an infrared ray charge image matrix for an 8-14mum band. CONSTITUTION:An epitaxial layer 11 is produced by growing Hg0.8Cd0.2Te crystals, and a charge accumulated region 7 is provided in the Hg0.8Cd0.2 crystals. The detection diode region 8 of the layer 11 is formed by selective growth of Hg0.7Cd0.3Te crystals. The band gap of the Hg0.7Cd0.3Te crystals is 250-300meV, which is much larger than that of a 10mum band crystal and better than the reverse bias characteristic of the detection diode made of Hg0.8Cd0.2Te. Thus, in the infrared ray charge image matrix for a 8-14mum band, the structure is so constructed that infrared rays are accumulated in the part of Hg0.8Cd0.2Te crystals and signals are detected at the part of Hg0.7Cd0.3Te. Thereby, the detection diode has characteristics of a 3-5mum band crystal and can obtain excellent characteristic of detection. |
