| 摘要 |
PURPOSE:To unnecessitate a special process of coating, and to facilitate the wiring to the electrode layer at the top by a method wherein the top periphery and the inclined part of a mesa structure are coated with an SiO2 film, and the electrode layer is extended to the neighborhood of the bottom of the inclined part on the SiO2 film. CONSTITUTION:An SiO2 passivatin film 4 has a film of 0.5mum-3mum thickness which coats the whole of the periphery at the top of the mesa structure and the inclined part. On the contrary, the electrode layer 5 keeps electric contact with a p<+> active region at the center of the top of the mesa structure, and is extended to the neighborhood of the lowest part of the inclined part of the mesa structure along the SiO2 passivation layer 4. Because of such a structure, only a normal CVD method or the like can be used to form the film 4 without the need of a special process. Besides, the periphery of the top of the mesa structure does not rise so much as several ten mum; therefore, the wire bonding to the layer 5 and the wiring by soldering can be easily accomplished. |
