| 摘要 |
PURPOSE:To enable utilization as a switching element of memorizing property by a method wherein a Schottky barrier is formed on at least one interface of a semiconductor thin film of transition metal oxide sandwiched between two electrodes. CONSTITUTION:Ti is evaporated on a glass substrate 1 as the lower side electrode 6, and WOx (x<=3) is formed as the semiconductor thin film 7 of transition metal oxide. Further, the upper electrode 8 is formed by forming Ir on the film 7. This film 7 of WOx or the like is of N type semiconductor substance: if an electrode 8 of larger work function is selected, the junction surface shows the rectifying characteristic. Aging whereby triangular wave voltage is impressed at several times across the electrodes 6, 7 of a thin film diode 5 thus constructed can yield the thin film diode having the hysteresis characteristic. Then, the switching element having the memory function can be obtained by using this diode 5 for the switching means. |
