发明名称 Piezoelectric resonating device.
摘要 A piezoelectric resonating device described comprises a substrate (11), a non-piezoelectric film layer (12) formed on the substrate (11) to create an air-gap (13) between a portion of the non-piezoelectric film (12) and the substrate (11). An electrode (14) is being formed on the non-piezoelectric film and a piezoelectric film layer (15, 25, 44, 54) is formed on the non-piezoelectric film (12) and the electrode (14). Another one of electrodes (16) is formed on the piezoelectric film layer (15).
申请公布号 EP0155145(A2) 申请公布日期 1985.09.18
申请号 EP19850301578 申请日期 1985.03.07
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUZUKI, HITOSHI C/O PATENT DIVISION TOSHIBA CORP.;SATO, HIROAKI C/O PATENT DIVISION TOSHIBA CORP.
分类号 H03H3/02;H03H3/04;H03H9/02;H03H9/17;H03H9/56 主分类号 H03H3/02
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