发明名称 |
Piezoelectric resonating device. |
摘要 |
A piezoelectric resonating device described comprises a substrate (11), a non-piezoelectric film layer (12) formed on the substrate (11) to create an air-gap (13) between a portion of the non-piezoelectric film (12) and the substrate (11). An electrode (14) is being formed on the non-piezoelectric film and a piezoelectric film layer (15, 25, 44, 54) is formed on the non-piezoelectric film (12) and the electrode (14). Another one of electrodes (16) is formed on the piezoelectric film layer (15). |
申请公布号 |
EP0155145(A2) |
申请公布日期 |
1985.09.18 |
申请号 |
EP19850301578 |
申请日期 |
1985.03.07 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUZUKI, HITOSHI C/O PATENT DIVISION TOSHIBA CORP.;SATO, HIROAKI C/O PATENT DIVISION TOSHIBA CORP. |
分类号 |
H03H3/02;H03H3/04;H03H9/02;H03H9/17;H03H9/56 |
主分类号 |
H03H3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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