| 摘要 |
<p>The present invention relates to a semiconductor memory device comprising: a semiconductor substrate (11) of a first conductivity type; at least one polycrystalline silicon electrode (15), at least one capacitor being formed between said semiconductor substrate (11) and said polycrystalline silicon electrode (15); and a MOS transistor formed on at least one side of said polycrystalline silicon electrode (15). The semiconductor substrate (11) has at least one recess, and said at least one polycrystalline silicon electrode (15) is insulatively disposed over that portion of said semiconductor substrate (11) which corresponds to said recess.</p> |
