| 摘要 |
PURPOSE:To manufacure an ion implantation bubble device having a large inductive anisotropic magnetic field in a short time by utilizing ion seeds except a hydrogen ion for a bubble crystal, performing ion implantation so that the crystal lattice distortion of an ion implantation layer will be the specific value and exposing the ion to a plasma of the specific gas. CONSTITUTION:Ions except H<+> ion, for instance, a Ne<+> ion or a He<+> ion, etc., are used as an ion seed for implantation to a bubble crystal and the ion implatation is performed so that th crystal lattice distortion of an ion implantation layer will be within the range of 0.8-2.5%. An ion-implanted wafer 11 is placed on an electrode 12, noble gases He, Ne and Ar, or noble gases including a hydrogen gas are introduced, high-frequency electric power is supplied between the electrode 12 and an opposite one 13, and an ion implantation layer of the wafer 11 is exposed to a generated plasma. A manufacturing period can be considerably reduced without use of hydrogen ion implantation demanding a long implantation period. |
