SEMICONDUCTOR LASER ARRAY

摘要

PURPOSE:To couple the laser operating parts with each other at the phase difference in zero degree by a method wherein common active layers are supplied with current from each mesa stripe assuming multiple mesa with high mixed crystal ratio to be current channels. CONSTITUTION:A p-clad layer 2, an active layer 3 and photo-guide layer 4 formed on a GaAs substrate 1 are common layers to each strip part 7 while an n clad layer 5 and a cap layer 6 are divided into multiple stripe parts 7 by a high resistance layer 8 respectively supplied with current. Each stripe part 7 respectively supplied with current becomes a current strangulating mechanism with laser operating parts 9 arrayed in parallel corresponding to each stripe. Besides laser beams are radiated from another laser operating part 3. The regions between the laser operating parts 9 become photocoupling parts 10 to phase-couple the laser beams optically. It is evident that the difference in refractive indices between the laser operating parts 9 and the photo-coupling parts 10 may be formed by the real number parts only.