| 摘要 |
PURPOSE:To increase the density of integration while accelerating the operation by a method wherein a gate electrode of a transister is formed to be arranged above a memory region. CONSTITUTION:A gate electrode 27 as a word line is formed to be located above a memory groove 14. Input data from aluminium wiring layer 31 as a data line are memorized in an N<-> layer 15 inside the groove 4 through the intermediary of a phosphorus doped polysilicon 23 coming into contact with a source electrode 28 by means of connecting and disconnecting the electrode 27. A polysilicon film 17 as power supply line located inside and on the surface of a P type silicon wafer 11 as the first layer is not exposed to a single crystal layer 24 as the second layer substrate, the region 28 and a drain region 29. Therefore the resistance value of the electrode 27 due to the step difference of the film 17 may be prevented from declining without fail simultaneously increasing the density of memory integration remarkably. |
