| 摘要 |
PURPOSE:To eliminate an excess floor space by forming a plasma chemical vapor deposition device in a vertical structure, and telescoping a substrate to be treated by dropping a bottom plate in the state that a lower electrode is removed to the lower portion of a reaction chamber. CONSTITUTION:A vertical reaction vessel 21 opened at the bottom is formed of a plurality of the first electrode plates 29 suspended in parallel, gas supply means 27 for injecting reaction gas, and pressure reducing means opened at the lower positions of the plates 29. Bottom plates 24 are alternately erected at an equal interval to the plates 29, and have a plurality of the second electrode plates 30, to which a substrate 31 to be treated is secured on the surface opposed to the plates 29. A high frequency power is applied to between the electrodes 29 and 30 in the state that the plate 24 is contacted with the bottom of the vessel 21 to perform a plasma chemical vapor deposition. The bottom plate 24 is moved downward to detach and attach the substrate 31 in the state that the plates 30 are removed to the lower portion of the vessel 21. |
