| 摘要 |
PURPOSE:To obtain an electrochromic display device capable of undergoing matrix drive and addressing in a short address time by laminating a prescribed thin film diode and an electrochromic display element on at least one interface of the thin film of a transition metal semiconductor interposed between two electrodes. CONSTITUTION:A lower electrode 31 is formed by vapor deposition of Ti on a glass base 30, a thin transition metal oxide semiconductor film 32 of WOx (x<=3), MoOx (x<=3), or V2Ox (x<=5) is formed by RF reactive magnetron sputtering in O2, and an upper electrode 33 is formed by vapor deposition of Ir, Pt, Pd, or the like. The thin film 32 is a n type semiconductor, and a Schottky barrier is formed on the junction face by selecting the electrode 33 higher in work function than this. An EC layer 34, a solid electrolyte 35, a WO3 EC layer 36, a transparent conductive film 37 are formed on this thin film diode 5, thus permitting an electrochromic display device addressable in a short addressing time to be obtained. |
