| 摘要 |
PURPOSE:To perform a stable tapered etching at the desired angle on an insulating layer by a method wherein the gas in which O2 is mixed in CH4 is used as reaction gas, and the mixing ratio of the above is properly adjusted. CONSTITUTION:After the spacer 2 of SiO2 has been formed on a magnetic bubble crystal 1, a non-magnetic pattern 4 and a conductor pattern 5 are formed. Then, an insulating layer 3A such as SiO2 and the like is formed, and a resist pattern 9 is formed thereon. A plasma etching is performed on the insulating layer 3A, the resist pattern 9 is removed, and a dual spacer 3 is formed. Reaction gas wherein O2 is mixed in CH4 is used for plasma etching, and the etching is performed by changing the ratio of said mixture. As a result, the tapered angle of the stepped part 3B on the dual spacer 3 can be controlled in a stable manner. |
