| 摘要 |
PURPOSE:To form a fine ''Permalloy'' pattern with high accuracy by forming a resist pattern consisting of two layers of photoresist films and having the thickness of withstand substantially ion milling with high accuracy. CONSTITUTION:A ''Permalloy'' film 2 is formed by a vacuum deposition method, etc. on a wafer 1. Polymethyl isopropenyl ketone is coated thereon and is baked to form a positive type resist film 3 and thereafter a negative type resist film 4 consisting of azide is formed thereon. The resist film is exposed to UV rays via a photomask to form a negative type resist pattern 5, then with the pattern 5 as a mask the entire surface of the wafer is exposed by th UV rays having a short wavelength to form a positive type resist pattern 6. Ion etching is performed finally with the patterns 5, 6 as a mask, by which a ''Permalloy'' pattern 7 is obtd. |
