| 摘要 |
PURPOSE:To reduce the penetration of source of pollution and the effect of external noise by a method wherein a metal thin film is formed on the passivation layer located on the surface of a semiconductor device. CONSTITUTION:On the surface of a semiconductor wafer 11 whereon an active region 12 is formed, a wiring layer 14 and a bonding pad 15 are formed through the intermediary of an insulating layer 13 such as a gate oxide film and the like, and a passivation layer 16 consisting of SiO2, phosphorus glass and the like is coated on the whole surface of said wiring layer 14 and the bonding pad 15. Then, a metal thin film 17 is vapor-deposited, and the metal thin film 17 located on the upper part of the pad 15 is removed by performing a photolithographic technique and an etching method. Lastly, an aperture 18 to be used for bonding is formed on the passivation layer 16 located inside the pad 15. As a result, the source of pollution does not come into the inner part even when pinholes and cracks are generated on the base passivation layer 16, and an electrostatically shielded state is maintained, thereby enabling to reduce the effect of external noise. |
