| 摘要 |
PURPOSE:To prevent deterioration of characteristics and exfoliation of source. drain electrodes during production process from happending by a method wherein, after forming process of FET for driver, the FET is covered with a metallic film for protection. CONSTITUTION:After forming an amorphous silicon thin film transistor, a metallic film 19 for protecting FET is formed by vacuum evaporation. A load resistor 18 is formed by patterning an n<+> alpha-Si film for load resistor and the film 19 on FET is removed by wetetching process to form a part 19' connecting a drain electrode 17 to the load resistor and an electrode for power supply. In case of etching an n<+> alpha-Si film of the resistor 18, alpha Si:H film 14 of FET covered with film 19 is not corroded while source.drain electrodes 16, 17 are not peeled off. Besides, the film 14 may not be corroded during the etching process to remove the film 19. |
