| 摘要 |
PURPOSE:To manufacture an ion-implanted bubble device having a large induced anisotropic magnetic field in short time by exposing a crystal for bubbles after ion implantation to the plasma of a specific gas. CONSTITUTION:Ions of neon, helium or the like are implanted to a thin magnetic garnet film formed by liquid phase epitaxial growth on a nonmagnetic substrate consisting of a garnet single crystal to form the transfer pattern for bubbles. A wafer 11 subjected to ion implantation is placed on an electrode 12 and the inside of a vessel 10 is evacuated. Gaseous hydrogen or a rare gas such as He, Ne or Ar contg. gaseous hydrogen is introduced into the vessel. High-frequency electric power is supplied between the electrode 12 and counter electrode 13 and the ion implanted layer of the wafer 11 is exposed to the generated plasma to increase the induced anisotropic magnetic field. Since a hydrogen ion implantation requiring long implantation time is not used, the considerable reduction in manufacturing time, i.e., an improvement in productivity and a reduction in cost are made possible. |
