发明名称 Semiconductor devices of multi-emitter type
摘要 A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external control signal to a gate electrode takes the form of a closed-loop shape and the majority of emitter regions are arranged on both sides of the loop. This arrangement ensures that the individual emitter regions, even when the number of the emitter regions is increased to a great extent, can be applied with a uniform control signal, thereby preventing degradation of the turn-off characteristics.
申请公布号 US4542398(A) 申请公布日期 1985.09.17
申请号 US19840621370 申请日期 1984.06.18
申请人 HITACHI, LTD. 发明人 YATSUO, TSUTOMU;NAITO, MASAYOSHI;NAGANO, TAKAHIRO;YASUDA, TOMIO;ONUKI, JIN;YANAGI, MITSUO;SATO, FUMIO
分类号 H01L29/74;H01L21/52;H01L23/48;H01L23/482;H01L29/08;H01L29/423;H01L29/744;(IPC1-7):H01L29/74 主分类号 H01L29/74
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