发明名称 METODO DE FORMACION DE CONTACTOS OHMICOS
摘要 <p>A method of forming ohmic contacts with thin film p-type semiconductor Class II B - VI A compounds comprising etching the film surface with an acidic solution, then etching with a strong basic solution and finally depositing a conductive metal layer.</p>
申请公布号 ES534777(D0) 申请公布日期 1985.09.16
申请号 ES19770005347 申请日期 1984.07.31
申请人 MONOSOLAR, INC. 发明人
分类号 H01L29/40;H01L21/28;H01L21/306;H01L21/443;H01L21/465;H01L31/04;(IPC1-7):H01L21/465 主分类号 H01L29/40
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