发明名称 PATTERN-TRANSFERRING METHOD
摘要 PURPOSE:To transfer minute patterns without heating to a high temperature or applying a high pressure, by a method wherein a thin film of an inorganic material on a base is pressed by a heated stamper provided with a rugged pattern to induce a phase transition of a crystal at parts making contact with the projected parts of the stamper, and a pattern differing in reflectance for light beams is provided. CONSTITUTION:The thin film 13 of an inorganic material (e.g., TeGeSn) is provided on the base (e.g., an acrylic plate) 10 by vacuum deposition or the like. The base 10 provided with the film 13 is fixed to a lower die 15 cooled by passing water 17 through a pipe 18, the heated stamper 1 provided with a rugged pattern is fixed to an upper die 16 with the pattern side directed downward, and pressing is conducted by the dies 16, 15 to induce a phase transition of a crystal only at the parts 21 of the thin film 13 making contact with the projected parts of the stamper 1. Accordingly, a pattern differing in reflectance for light beams is provided in correspondence with the rugged pattern of the stamper 1, thereby transferring the pattern.
申请公布号 JPS60180886(A) 申请公布日期 1985.09.14
申请号 JP19840037786 申请日期 1984.02.29
申请人 FUJITSU KK 发明人 SHIODA AKIRA;ETSUNO NAGAAKI;GOTOU YASUYUKI;MORIBE MINEO
分类号 B41M5/26;B41M5/382;G11B7/00;G11B7/0045;G11B7/24;G11B7/26 主分类号 B41M5/26
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