| 摘要 |
PURPOSE:To obtain the titled device including a bipolar transistor having high performance with a diffusion layer, a junction thereof is shallow and small, by forming an emitter region consisting of a first conduction type epitaxial layer, a side surface thereof is coated with an insulating film, and a second conduction type base region interposing between the nose of the emitter region and a first insular region. CONSTITUTION:A buried layer 2 and a growth layer 3 are formed on a silicon substrate 1, a foundation oxide film 4 and a nitride film 5 are shaped on the layer 3, and an insulating isolation oxide film 6 is formed through selective oxidation. A diffusion layer 7 and a base diffusion layer 8 are shaped, a doped polycrystalline silicon film 9 is grown, and formed so as to selectively cover the diffusion layer 8, and a CVD oxide film 10 is shaped. A selective epitaxial layer 13 to which arsenic is doped is formed, and boron is diffused from the polycrystalline silicon film 9 to shape a contact base diffusion layer 12 having low resistance. A protective film 14 is formed, and an Al electrode 15 is shaped. Heat treatment at a high temperature is required only when the selective epitaxial growth layer as an emitter is shaped, and a junction, the depth of a base junction thereof is extremely shallow, can be formed. |
