| 摘要 |
PURPOSE:To improve the yield of products by implanting the ions of an impurity to a base region and annealing the ions of the impurity in a reducing atmosphere. CONSTITUTION:Arsenic ions are implanted to a substrate 1 as a p type silicone single crystal wafer to form a collector buried layer 2, an epitaxial layer 3 to which phosphorus is doped is grown, phosphorus ions are implanted to the layer 3 to shape a collector 4 reaching to the buried layer 2, boron ions are implanted to form two isolations 5 reaching to the substrate 1, and the whole is annealed at 1,100-1,200 deg.C. Boron ions are implanted between two isolations 5, a base region 6 is formed through annealing at 900-1,100 deg.C in a nitrogen atmosphere containing methane of 100ppm, arsenic ions are implanted to one part of the region 6, and emitter region 7 is shaped through annealig at 900-1,100 deg.C in nitrogen. |
