| 摘要 |
PURPOSE:To simplify the process and suppress generation of auto-doping of impurity to amorphous silicon film by forming a thin amorphous silicon film by the vacuum deposition method on a single crystal insulated substrate and causing a single crystal silicon film to epitaxially grow thereon by the ionized vacuum deposition method. CONSTITUTION:A thin amorphous silicon film 2 is formed by the ionized vacuum deposition through the steps that a single crystal sapphier substrate 1 is arranged within a vacuum chamber of the ionized vacuum deposition apparatus, temperature of substrate 1 is held at a room temperature, silicon which is the vaporization source is vaporized by irradiation of electron beam, a part of vapor of silicon is ionized by collision with hot electrons, the ionized silicon atoms are accelerated by applying an acceleration voltage and the silicon atoms are vacuum deposited on the substrate 1. While keeping a degree of vacuum, temperature of substrate 1 is heated up to 800 deg.C and is held and a single crystal silicon film by the ionized vacuum deposition method is caused to epitaxially grow by vacuum depositing the silicon atoms 3 of the amorphous silicon film 2. In this case, the amorphous silicon film 2 is single-crystallized and a single crystal silicon film 4 is formed by the epitaxial growth method. |
