发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To improve the memory density as well as the characteristics of a function part by giving a prescribed form to a soft magnetic substance pattern which overlaps a nonmagnetic substance pattern and a conductor pattern. CONSTITUTION:A nonmagnetic substance pattern 1 and a conductor pattern 3 are formed on a magnetic bubble crystal 10 via a spacer 11. While a transfer pattern 2 and a pickax-shaped pattern 4 are formed to different layers from each other. In this case, the pattern 2 overlaps the pattern 1 at an edge part 1a and with a sharp level difference after a spacer 12 is formed. While the pattern 4 overlaps the pattern 3 at an edge part 3a with no level difference or a gentle slope after the pattern 2 is formed and flattened with application of resin 13.
申请公布号 JPS60179990(A) 申请公布日期 1985.09.13
申请号 JP19840035113 申请日期 1984.02.28
申请人 FUJITSU KK 发明人 YANASE TAKEYASU;YONEKURA YOSHIMICHI
分类号 G11C11/14 主分类号 G11C11/14
代理机构 代理人
主权项
地址