| 摘要 |
PURPOSE:To realize the characteristic test and function test of a semiconductor device of submicron region with a high efficiency and a high resolution by forming a particular test circuit on the same substrate with semiconductor element groups. CONSTITUTION:A test circuit, consisting of a first capacitor which forms an electrode 2 with a conductor having a secondary electron release ratio smaller than 1 for irradiation of primary charged beam generated by the same acceleration voltage, a second capacitor which forms an electrode 4 with a conductor having larger than 1, and a switching element 6 which connects these two capacitors in parallel between an input terminal 7 and a ground terminal 8, is formed on the same substrate with semiconductor element groups. The electrode of the one capacitor is irradiated with the primary charged beam 1 and the electrode of the other capacitor is irradiated with the beam. Thereby, voltage change is given to the input terminal 7 of the switching element 6 and the switching element 6 is controlled for ON and OFF. The semiconductor element groups are tested with the signal of output terminal 11 of this switching element 6. |
