| 摘要 |
PURPOSE:To realize etching within a short period of time and with high processing accuracy by using fluoric carbon ambient as the etching ambient and using a material which is not easily reacting with fluorine ions as the mask material. CONSTITUTION:A material to be etched 10 is placed on a sample pedestal 9, the plasma conversion field is generated by applying a current to a magnet 4, a predetermined voltage is applied to the anode 3 and carbon fluoride gas is supplied from the supply hole 1. CF4 is ionized by the electrons and voltage applied to the anode 3 and thereby various ions such as CF<+>, CF2<+>, CF<+>, F<+> and C<+>, etc. When a voltage difference is generated between grids 5, these ions are accelerated and lead out in the direction determined by the structure of gride 5 and collide with the material 10 to be etched within a sample chamber 7 through the mask 11. Thereby, etching of ceramic material such as Al2O3.TiC, nonmagnetic ferrite can be realized within a short period. |
