| 摘要 |
PURPOSE:To enable trimming after forming a gate electrode by fitting chromium or a metal mainly comprising chromium as a gate electrode material on a gate insulator. CONSTITUTION:A first conductive film 2, a first non-singular crystal semiconductor 3, a first insulator 4 and a third semiconductor 5 are laminated on an insulating substrate 1. A second conductive film 6 consisting of ITO, etc. and a second insulator 7 are laminated on the upper surface of the third semiconductor. An intrinsic or P<-> or N<-> type nonsingular crystal semiconductor constituting a channel forming region is laminated as a third semiconductor 24 while covering such laminates 13, 14, 15, a conductor 16 and an insulator 17. A silicon nitride film 25 and a third conductive film 26 are shaped. The conductive film 26 constituting the gate electrode consists of a conductive film, which is composed of chromium or mainly comprises chromium and has heat resistance and sublimating properties. |
