| 摘要 |
PURPOSE:To reduce photoetching processes by one time, and to manufacture a CMOS semiconductor device through a simple process with high productivity by forming a resist pattern on a firstly shaped resist pattern again as the first shaped resist pattern is left as it is. CONSTITUTION:A p well region 2 is formed to an n type silicon substrate 1 through selective boron diffusion, an silicon oxide film 3 is grown on the whole surface through thermal oxidation, and an silicon nitride film 4 is deposited. Resist patterns 51, 52 covering n channel and p channel transistor formation prearranged regions are formed through a photoetching method, and the silicon nitride film 4 is etched selectively. Phosphorus ions are implanted while using the resist patterns 51, 52 as masks to shape n type ion implantation layers 7. A resist film 60 is formed again, a resist pattern 8 is shaped so that an opening is bored to an inversion preventive layer formation prearranged region in the well region to which ions are not implanted, and boron ions are implanted to shape p type ion implantation layers 9. Accordingly, an n channel MOS transistor and a p channel MOS transistor are formed, thus manufacturing a CMOS. |
