| 摘要 |
PURPOSE:To obtain an infrared-ray charge injected element having light-receiving characteristics at high speed by surrounding active regions corresponding to each picture element in a substrate consisting of a compound semiconductor by a resistance layer, which is formed to a shape that it is buried in the substrate consisting of the compound semiconductor and has a conduction type reverse to the substrate. CONSTITUTION:N type Hg-Cd-Te epitaxial films 30 are formed to the upper surface of an N type Cd-Te substrate 10 shaping an infrared-ray charge injected element. The epitaxial layers 30 are formed to a shape that they are surrounded by P type Cd-Te buried layers 20 before forming the epitaxial films 30. When the incident beams of infrared rays are projected from the surface, positive charges corresponding to optical signals are stored in potential wells in the lower surfaces of charge storage electrodes 40. The positive charges apply voltage lower than the voltage of the charge storage electrodes 40 to charge injecting electrodes 50. Stored signal charges are injected in the direction of the substrate from the charge injecting electrodes and read. When charges injected to the substrate recombine at high speed and charges disappear at that time, the infrared-ray charge injected element can be operated at high speed. |
