发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PURPOSE:To attain clean vacuum condition and improve exhaustion capability and extend the recovery period of cryopump by forming the structure so that the gas absorbed by active carbon of cryopump can be exhausted by a vertical type turbo molecular pump. CONSTITUTION:An exhaustion system of aluminum sputtering apparatus is formed with four pumps of rotary pumps 12a, 12b, cryopump 16 and vertical type turbo molecular pump 14. Inside of chamber 10 is exhausted by a pump 12a and a pump 14 and is then exhausted to the vacuum condition as high as 2X10<-5> to 8X10<-7>Torr with both pump 16 and pump 14. The Ar gas for sputtering is exhausted by the pump 14. When the gas absorbed by the active carbon after stop of pump 16 is generated in the pump 16 and the inside becomes 5X 10<-1>Torr, the gate valve 20 opens and the inside is exhausted up to 5X10<-2>Torr. When inside vacuum condition becomes 5X10<-2>Torr, the valve 20 closes. This cycle is repeated for 60min and thereafter the dry N2 is absorbed for 30min. Thereafter, inside of pump 16 is exhausted up to 8X10<-8>Torr with the pump 14.
申请公布号 JPS60180117(A) 申请公布日期 1985.09.13
申请号 JP19840035316 申请日期 1984.02.28
申请人 OKI DENKI KOGYO KK 发明人 HOSOYA MASAO;SUZUKI SHINTAROU
分类号 C23C14/34;H01L21/285 主分类号 C23C14/34
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