发明名称 RANDOM ACCESS MEMORY
摘要 PURPOSE:To avoid the overlap between a precharging action and a memory writing action by controlling a writing circuit according to a signal showing a precharge state and a writing control signal. CONSTITUTION:A precharge control signal PS is supplied from a precharge control circuit 12 via a precharge control circuit 15 to show the precharge control state of the circuit 15. While a writing control signal WS is supplied from a writing control circuit 17. A synthesizing circuit 21 receives those signals PS and WS and produces an output MPS to control a writing circuit 16. The output MPS is set at a low level as long as the signal PS is kept at a high level and even though the signal WS is kept at a high level. Therefore no overlap is produced between a precharging action and a memory writing action. Then no writing is carried out to a memory during a precharging action although a writing signal WI is supplied to the circuit 17 simultaneously with or immediately after an input change of an address signal. This prevents a malfunction caused inside a random access memory.
申请公布号 JPS60179993(A) 申请公布日期 1985.09.13
申请号 JP19840035494 申请日期 1984.02.27
申请人 TOSHIBA KK 发明人 ISOBE MITSUO
分类号 G11C11/41;G11C7/12;(IPC1-7):G11C11/34 主分类号 G11C11/41
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