| 摘要 |
PURPOSE:To prevent the effect of interference fringes due to a gentle stepped section by forming at least one wafer alignment pattern having width of approximately 4mum or less on a substrate. CONSTITUTION:The shape of a wafer alignment mark is formed to a mark, such as a square mark, a triangular mark or a trapezoid mark. The width W1 of each mark is brought to a value where interference fringes are difficult to be generated on the application of a photoresist such as one smaller than 4mum. The width direction represents the direction of scanning by an image pickup device. On the other hand, the length H1 of several mark is determined according to the necessity of any scanning in the length direction of the image pickup device, and brought actually to 8-10mum. W1 is smaller than 2d0 or equal to it as a reference when stepped sections 1a, 1b are d0 deep, the surface of a photo-resist film is flattened approximately, and film thickness is varied steeply. |
