| 摘要 |
PURPOSE:To form a pattern for a resist film so as to have a side surface inclining to a base body for the resist film, and to shape a small-sized contact hole, an opening section thereof takes a funnel shape, through anisotropic etching by executing a plurality of exposure while superposing exposure regions and making the size of said regions differ. CONSTITUTION:A resist film 5a is formed on a substrate 2 with a transistor electrode 1, a region in size conformed to a funnel-shaped opening section in a contact hole 3a is exposed in the quantity of exposure smaller than a normal method, and a section 8a is removed through development. A region in size conformed to the bottom of the contact hole 3a at the center of the base of 8a is exposed, and a section 8b is removed through development to form an opening 6a. The resist film 5a and an insulating film 4 are etched until a hole bored to the insulating film 4 reaches to the transistor electrode 1 under conditions in which the etching rates of the resist film 5a and the insulating film 4 are made approximately the same through anisotropic dry etching while using the resist film 5a as a mask. The shape of the opening 6a is transferred to the insulating film 4 as it is, and the funnel-shaped opening contact hole 3a in upper size (a) and lower size (b) is formed to the insulating film 4. |
