| 摘要 |
PURPOSE:To shorten a distance, in which charged particles proceed in the lateral direction in a resist film, during a time when charged particles reach to a sample, to reduce a proximity effect and to improve the accuracy of exposure by ac- celerating charged particles during a passage through the resist film in the direction of the sample. CONSTITUTION:An electron-beam sensitive resist film 2 is applied on a sample 1 such as an Si wafer. A conductive film 3 consisting of Al, etc. is applied and formed on the resist film 2. A DC power supply is connected between the conductive film 3 and the sample 1, and the conductive film 3 is kept at zero potential while the sample 1 is kept at positive potential. An electron-beam exposure device is used under the state, and the resist film 3 is exposed to a desired pattern. Electron beams projected to the resist film 2 from a section upper than the resist film pass through the conductive film 3 as the surface, and are scattered in the resist film 2. Scattered electrons are accelerated in the direction of the sample 1 because an electric field by the application of voltage from the power supply 4 is applied at that time. |
