| 摘要 |
PURPOSE:To enable the prevention of damage caused by static electricity by a method wherein the semiconductor chip section of a semiconductor IC sealed with resin is shielded electrostatically. CONSTITUTION:Source and drain regions 10 and 11 are formed in an Si substrate 14, and a gate electrode 4 is provided on a gate oxide film 12 and connected to the polycrystalline Si source and drain regions 10 and 11 through openings of the oxide film 13. A conductive thin film 1 is formed on the surface of a passivation film 2 on an interlayer insulation film 9, and this thin film 1 is connected to a ground wiring 7, a grounding wiring, and its bonding pad 8. Besides, the conductive thin film 1 is grounded via bonding wire 15 from the bonding pad part 8. The semiconductor IC having such a structure has the effect of electrostatic shield. |
